Product Summary

The UPA843TC-T1 is an NPN silicon RF transistor.

Parametrics

UPA843TC-T1 absolute maximum ratings: (1)Collector to Base Voltage VCBO: 15 to 9 V; (2)Collector to Emitter Voltage VCEO: 6 to 5.5 V; (3)Emitter to Base Voltage VEBO: 2 to 1.5 V; (4)Collector Current IC: 35 to 100 mA; (5)Total Power Dissipation Ptot: 200 in 1 element; 230 in 2 elements mW; (6)Junction Temperature Tj: 150 ℃; (7)Storage Temperature Tstg: -65 to +150 ℃.

Features

UPA843TC-T1 features: (1)Flat-lead 6-pin thin-type ultra super minimold package; (2)2 different built-in transistors (2SC5603, 2SC5600); (3)Low voltage operation.

Diagrams

UPA843TC-T1 pin connnections

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
UPA843TC-T1
UPA843TC-T1
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
UPA800T
UPA800T
Other

Data Sheet
Negotiable 
UPA800T-A
UPA800T-A
CEL
Transistors RF Bipolar Small Signal NPN Silicn AMP Oscilltr Twn Trnst
Data Sheet
0-1: $0.89
1-10: $0.83
10-100: $0.66
100-500: $0.59
UPA800TF
UPA800TF
Other

Data Sheet
Negotiable 
UPA800T-T1
UPA800T-T1
CEL
Transistors RF Bipolar Small Signal DISC BY CEL 2/02 SO-6 NPN HI-FREQ
Data Sheet
Negotiable 
UPA800T-T1-A
UPA800T-T1-A
CEL
Transistors RF Bipolar Small Signal NPN Silicn AMP Oscilltr Twn Trnst
Data Sheet
0-3000: $0.40
UPA801T
UPA801T
NEC/CEL
Transistors RF Bipolar Small Signal NPN High Frequency
Data Sheet
Negotiable