(Hong Kong)
Product Summary
The 2SJ302-Z-E1 is a Mos Field Effect Power Transistor designed for solenoid, motor and lamp driver.
Parametrics
2SJ302-Z-E1 absolute maximum ratings: (1)Drain to source voltage VDSS: -60 V; (2)Gate to source voltage VGSS: -20,+10 V; (3)Drain current (DC) ID: ±16 A; (4)Drain current(pulse) ID: ±64 A; (5)Power dissipation PD: 75 W; (6)Channel temperature Tch: 150 ℃; (7)Storage temperature Tstg: -55 to +150 ℃.
Features
2SJ302-Z-E1 features: (1)Low on-state resistance: RDS(on) ≤ 0.1Ω (VGS=-10V,ID=-8A); RDS(on) ≤ 0.24Ω (VGS=-4V,ID=-6A); (2)Low Ciss Ciss=1200PF TYP; (3)Built-in G-S gate protection diode.
Diagrams
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2SJ387(L) |
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